dimensions in inches and (millimeters) - 46 - version: b07 ss32 - ss315 3.0 amps. surface mount schottky barrier rectifiers smc/do-214ab .126(3.20) .114(2.90) .012(.31) .006(.15) .008(.20) .004(.10) .063(1.6) .039(1.0) .245(6.22) .220(5.59) .280(7.11) .260(6.60) .103(2.62) .079(2.00) .320(8.13) .305(7.75) .061(1.56) .050(1.26) features for surface mounted application easy pick and place metal to silicon rectifier, majority carrier conduction low power loss, high efficiency high current capability, low vf high surge current capability plastic material used carriers underwriters laboratory classification 94v-0 epitaxial construction high temperature soldering: 260 o c / 10 seconds at terminals mechanical data case: jedec do-214ab molded plastic terminals: pure tin plated, lead free polarity: indicated by cathode band packaging: 16mm tape per eia std rs-481 weight: 0.21 gram maximum ratings and electrical characteristics rating at 25 o c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number symbol ss 32 ss 33 ss 34 ss 35 ss 36 ss 39 ss 310 ss 315 units maximum recurrent peak reverse voltage v rrm 20 30 40 50 60 90 100 150 v maximum rms voltage v rms 14 21 28 35 42 63 70 105 v maximum dc blocking voltage v dc 20 30 40 50 60 90 100 150 v maximum average forward rectified current at t l (see fig. 1) i (av) 3.0 a peak forward sur g e current, 8.3 ms sin g le half sine-wave superimposed on rated load (jedec method ) i fsm 100 70 a maximum instantaneous forward voltage (note 1) if= 3.0a @ 25 o c @ 100 o c v f 0.5 0.4 0.75 0.65 0.85 0.70 0.95 0.80 v 0.5 0.1 maximum dc reverse current @ t a =25 o c at rated dc blocking voltage @ t a =125 o c i r 10 5 0.5 ma ma typical thermal resistance ( note 2 ) r jl r ja 17 55 o c/w operating temperature range t j -55 to +125 -55 to +150 o c storage temperature range t stg -55 to +150 o c notes: 1. pulse test with pw=300 usec, 1% duty cycle
ratings and characteristic curves (ss32 thru ss315) o t r a n s c i e n t t h e r m a l i m p e d a n c e , ( c / w ) 1 0.01 0.1 10 100 0.1 10 1 100 t, pulse duration, (sec) fig.2- maximum non-repetitive peak forward surge current p e a k f o r w a r d s u r g e c u r r e n t . ( a ) 1 10 100 100 8060 40 20 0 number of cycles at 60hz at rated tl 8.3ms single half sine wavejedec method fig.1- maximum forward current derati ng curve a v e r a g e f o r w a r d c u r r e n t . ( a ) 50 60 70 80 90 100 110 120 160 150 140 130 0 1 2 3 o lead temperature. ( c) resi stiv e or indu ctiv e lo ad ss32 -ss3 4 ss35 -ss3 15 pcb mounted on 0.6x0.6" (16x16mm) copper pad areas fig.3- typical forward characteristics i n s t a n t a n e o u s f o r w a r d c u r r e n t . ( a ) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 40 forward volt age. (v) 0 tj=25 c pu ls e w idt h= 300 s 1% du ty cy cl e fig.4- typical reverse characteristics i n s t a n t a n e o u s r e v e r s e c u r r e n t . ( m a ) 0 20 40 60 80 100 120 140 0.001 0.01 0.1 1 10 20 percent of rated peak reverse volt age. (%) 0 tj =1 25c 0 tj =2 5 c 0 tj =7 5c ss 32 -ss 34 ss 35 -ss 31 5 fig.5- typical junction capacit ance j u n c t i o n c a p a c i t a n c e . ( p f ) 0.1 1 10 100 10 100 1000 reverse voltage. (v) ss32-ss34 ss35-ss36ss39-ss315 0 tj =2 5c f= 1.0 mh z vs ig= 50 mv p- p version: b07 fig.6- typical transient thermal characteristics ss32-ss34 ss3 9-ss 310 ss35-ss36 ss3 15
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